Growth of active Nd-doped YAP thin-film waveguides by laser ablation

被引：23
|
作者：
Sonsky, J [1 ]
Lancok, J [1 ]
Jelinek, M [1 ]
Oswald, J [1 ]
Studnicka, V [1 ]
机构：
[1] Acad Sci Czech Republ, Inst Phys, CZ-18040 Prague 8, Czech Republic
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1998年 / 66卷 / 05期
关键词：
D O I：
10.1007/s003390050718
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The epitaxial growth of Nd-doped YAlO3 (YAP) thin films as a promising material for application in a planar waveguide laser has been studied. The films have been grown on sapphire(0001) and YAP(001) substrates by laser ablation. The influence of the substrate temperature and ambient oxygen pressure on the crystalline structure, concentration of Nd incorporated into films, and consequent luminescence spectra were investigated. The waveguiding properties were observed and refractive index of the films was evaluated.
引用
收藏
页码：583 / 586
页数：4
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