The theory of ion beam induced charge in metal-oxide-semiconductor structures

Silicon-on-insulator circuits have been considered less sensitive to single event effects than devices made using bulk technology. However, model experiments have indicated that charge collection occurs not only from the active layer above the buried oxide (BOX) but also from the substrate below the BOX, contrary to the earlier belief. In this paper we will present an analytical model based on the Gunn theorem to describe ion induced charge collection in metal-oxide-semiconductor devices. (c) 2007 American Institute of Physics.