Piezoelectric electron-phonon interaction in impure semiconductors: Two-dimensional electrons versus composite fermions

被引：12
|
作者：
Khveshchenko, DV
Reizer, M
机构：
[1] NORDITA, DK-2100 Copenhagen, Denmark
[2] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA
来源：
PHYSICAL REVIEW B | 1997年 / 56卷 / 24期
关键词：
D O I：
10.1103/PhysRevB.56.15822
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We study the effects of piezoelectric coupling between two-dimensional electrons and bulk phonons in cases of both zero and strong perpendicular magnetic fields, the latter corresponding to even-denominator filling fractions. In contrast to the case of coupling via the deformation potential, the leading contributions due to impurity-renormalized electron-phonon vertices are not exactly canceled by processes of inelastic electron-impurity scattering. Electron energy relaxation time, diffusion correction to the conductivity, and the phonon emission rate by hot electrons are computed for realistic GaAs/AlxGa1-xAs heterostructures. [S0163-1829(97)07147-6].
引用
收藏
页码：15822 / 15826
页数：5
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