In-line monitoring of HF last cleaning of implanted and non-implanted silicon surfaces by non-contact surface charge measurements

被引：0
|
作者：
Kondoh, E [1 ]
Trauwaert, MA [1 ]
Heyns, M [1 ]
Maex, K [1 ]
机构：
[1] IMEC, B-3001 Louvain, Belgium
来源：
CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING V | 1998年 / 35卷
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Silicon surfaces after HF-last cleaning were characterized by space charge measurements. A satisfactory good agreement was confirmed between space charge parameters and cleaning conditions. The growth of native oxide after HF-last cleaning was monitored comparatively with in-situ ellipsometry. The presence of top oxide layer on ion-implanted wafers were detected precisely. The most distinguished parameter was found to be minority carrier recombination lifetime.
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页码：221 / 228
页数：8
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