Effect of oxygen and nitrogen additions on silicon nitride reactive ion etching in fluorine containing plasmas

被引：0
|
作者：
Reyes-Betanzo, C [1 ]
Moshkalyov, SA [1 ]
Ramos, ACS [1 ]
Cotta, MA [1 ]
Swart, JW [1 ]
机构：
[1] Univ Estadual Campinas, CCS, BR-13083970 Campinas, SP, Brazil
来源：
PLASMA PROCESSING XIV | 2002年 / 2002卷 / 17期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Results of a comparative study Of Si3N4, SiO2 and Si reactive ion etching in various fluorine-containing plasmas (CF4/O-2/N-2, SF6/O-2/N-2, CF4/H-2, SF6/CH4/N-2 and SF6/CH4/N-2/O-2) are presented. Possible mechanisms involved in etching of the above, mentioned materials are discussed. Plasma-induced structural surface damages have been analyzed using AFM. It has been shown that even small oxygen additions improve significantly etched surface morphology eliminating micromasking.
引用
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页码：263 / 276
页数：14
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