Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by the Rashba Interface

被引:55
|
作者
Cui, Baoshan [1 ,2 ,3 ]
Wu, Hao [1 ]
Li, Dong [4 ]
Razavi, Seyed Armin [1 ]
Wu, Di [1 ]
Wong, Kin L. [1 ]
Chang, Meixia [2 ,3 ]
Gao, Meizhen [2 ,3 ]
Zuo, Yalu [2 ,3 ]
Xi, Li [2 ,3 ]
Wang, Kang L. [1 ]
机构
[1] Univ Calif Los Angeles, Dept Elect & Comp Engn, Los Angeles, CA 90095 USA
[2] Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China
[3] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China
[4] Shanxi Normal Univ, Res Inst Mat Sci, Linfen 041004, Shanxi, Peoples R China
基金
美国国家科学基金会; 中国国家自然科学基金;
关键词
spin-orbit torque; perpendicular magnetic anisotropy; interfacial decoration; field-free magnetization switching; Rashba effect; interfacial oxygen content;
D O I
10.1021/acsami.9b13622
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Current-induced spin-orbit torques (SOTs) enable efficient electrical manipulation of the magnetization in heterostructures with a perpendicular magnetic anisotropy through the Rashba effect or spin-Hall effect. However, in conventional SOT-based heterostructures, an in-plane bias magnetic field along the current direction is required for the deterministic switching. Here, we report that the field-free SOT switching can be achieved by introducing a wedged oxide interface between a heavy metal and a ferromagnet. The results demonstrate that the field-free SOT switching is determined by a current-induced perpendicular effective field (H-z(eff)) originating from the interfacial Rashba effect due to the lateral structural symmetry-breaking introduced by the wedged oxide layer. Furthermore, we show that the sign and magnitude of H-z(eff) exhibit a significant dependence on the interfacial oxygen content, which can be controlled by the inserted oxide thickness. Our findings provide a deeper insight into the field-free SOT switching by the interfacial Rashba effect.
引用
收藏
页码:39369 / 39375
页数:7
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