An analytical model for current-voltage characteristics of AlGaN/GaN HEMTs in presence of self-heating effect

被引：46
|
作者：
Cheng, Xiaoxu [1 ]
Li, Miao [1 ]
Wang, Yan [1 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 01期
关键词：
AlGaN/GaN; HEMTs; Self-heating; Analytical thermal model; FIELD-EFFECT TRANSISTOR; ELECTRON-MOBILITY; TEMPERATURE; GAN; POLARIZATION; HETEROSTRUCTURES; PERFORMANCE; CAPACITANCE; HFETS;
D O I：
10.1016/j.sse.2009.09.026
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 2-D analytical thermal model for the I-V characteristics of AlGaN/GaN is presented. The effect of self-heating is studied by investigating the temperature effects on various parameters: the 2DEG sheet carrier density. the Fermi level, the electron mobility, the saturation velocity and the critical field. After incorporating self-heating effect in calculations of current-voltage characteristics, our results agreed well with published experimental data. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码：42 / 47
页数：6
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