A 70 GHz Bidirectional Front-End for a Half-Duplex Transceiver in 90-nm SiGe BiCMOS

被引：0

作者：

Kijsanayotin, Tissana ^{[1
]}

Li, Jun ^{[1
]}

Buckwalter, James F. ^{[2
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

2015 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2015年

关键词：

Bidirectional; switchless; PALNA; passive mixer; mm-wave; E-band; pulse radar; time-division duplexing; point-to-point communication; CMOS; SWITCH; CHIP;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a 70 GHz bidirectional front-end transceiver circuit in a 90-nm SiGe BiCMOS process. The design consists of a bidirectional power amplifier/low-noise amplifier (PALNA) and a passive mixer. Isolation between the transmitter (TX) and receiver (RX) is achieved with a passive impedance transformation network, eliminating the need for a high frequency transmit/receive switch. Measurement results show the transmitter has a peak output power of 7.2 dBm and a peak conversion gain of 14.5 dB while nominally consumes 47 mA from a 1.8 V supply. The receiver has a peak conversion gain of 9.9 dB and a minimum noise figure of 8.6 dB with nominal current consumption of 18 mA from a 1.5 V supply. This switchless bidirectional front-end is suitable for a half-duplex system with shared TX/RX antenna such as a pulse-compression range sensor or a time-division duplexing (TDD) point-to-point communication system in E-band.

引用

页数：4

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