Analytical piezoelectric charge densities in GaAs MESFET's

被引：2
|
作者：
Huang, QA
Tong, QY
机构：
[1] Microelectronics Center, Southeast University
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 03期
关键词：
D O I：
10.1109/16.485669
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The orientation effect in GaAs MESFET's is related to the piezoelectric charge due to stress in overlayers. This brief describes an analytical method for the calculation of the piezoelectric charge in GaAs MESFET's on (100), (011), ((1) over bar (1) over bar (1) over bar)Ga, and (111)As substrates.
引用
收藏
页码：509 / 510
页数：2
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