Surface micromachined AlN thin film 2 GHz resonator for CMOS integration

被引：38

作者：

Hara, M

Kuypers, J

Abe, T

Esashi, M

机构：

[1] Tohoku Univ, Dept Mechatron & Precis Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

[2] Tohoku Univ, NICHe, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2005年 / 117卷 / 02期

基金：

日本学术振兴会;

关键词：

FBAR; CMOS compatibility; germanium; sacrificial layer etching; aluminum nitride;

D O I：

10.1016/j.sna.2004.06.014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the development of the aluminum nitride (AIN) thin film bulk acoustic resonator (FBAR) using noble MEMS techniques for CMOS integration. An air-gap was fabricated under the resonator for acoustic isolation. Germanium (Ge) was used as a sacrificial layer to make the air-gap. This technique gives high CMOS compatibility. The resonator achieved a Q factor of 780 and an effective electro-mechanical coupling constant (k(eff)(2)) of 5.36% at a resonant frequency of 2 GHz. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：211 / 216

页数：6

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