Surface micromachined AlN thin film 2 GHz resonator for CMOS integration

被引：38
|
作者：
Hara, M
Kuypers, J
Abe, T
Esashi, M
机构：
[1] Tohoku Univ, Dept Mechatron & Precis Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
[2] Tohoku Univ, NICHe, Aoba Ku, Sendai, Miyagi 9808579, Japan
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2005年 / 117卷 / 02期
基金：
日本学术振兴会;
关键词：
FBAR; CMOS compatibility; germanium; sacrificial layer etching; aluminum nitride;
D O I：
10.1016/j.sna.2004.06.014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the development of the aluminum nitride (AIN) thin film bulk acoustic resonator (FBAR) using noble MEMS techniques for CMOS integration. An air-gap was fabricated under the resonator for acoustic isolation. Germanium (Ge) was used as a sacrificial layer to make the air-gap. This technique gives high CMOS compatibility. The resonator achieved a Q factor of 780 and an effective electro-mechanical coupling constant (k(eff)(2)) of 5.36% at a resonant frequency of 2 GHz. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：211 / 216
页数：6
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