Gallium nitride thin films by microwave plasma-assisted ALD

被引：7

作者：

Romo-Garcia, F. ^{[1
]}

Higuera-Valenzuela, H. J. ^{[1
]}

Cabrera-German, D. ^{[2
]}

Berman-Mendoza, D. ^{[3
]}

Ramos-Carrazco, A. ^{[3
]}

Contreras, O. E. ^{[4
]}

Garcia-Gutierrez, R. ^{[3
]}

机构：

[1] Univ Sonora, Dept Fis, Hermosillo 83000, Sonora, Mexico

[2] Univ Sonora, Dept Invest Polimeros & Mat, Hermosillo 83000, Sonora, Mexico

[3] Univ Sonora, Dept Invest Fis, Hermosillo 83000, Sonora, Mexico

[4] Univ Nacl Autonoma Mexico, Ctr Nanociencias & Nanotecnol, Apdo Postal 2681, Ensenada 22800, Baja California, Mexico

来源：

OPTICAL MATERIALS EXPRESS | 2019年 / 9卷 / 11期

关键词：

TEMPERATURE; XPS; GAN;

D O I：

10.1364/OME.9.004187

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Synthesis and characterization of gallium nitride (GaN) thin films via microwave plasma-assisted atomic layer deposition (MPALD) is reported in this research. The GaN thin films grown by this technique were amorphous or nanocrystalline as it was demonstrated by electron microscopy. The optical response of these GaN thin films showed a broad peak between 400 nm and 750 nm wavelengths due mostly to carbon and oxygen impurities as has been demonstrated by XPS. That emission from these GaN thin films is located at the border of white and yellow-green emission according to CIE 1931 chromaticity diagram with coordinates, x = 0.3491 and y = 0.4312. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：4187 / 4193

页数：7

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