p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect

被引：160
|
作者：
Xue, Fei [1 ]
Chen, Libo [1 ]
Chen, Jian [1 ]
Liu, Jingbin [1 ]
Wang, Longfei [1 ]
Chen, Mengxiao [1 ]
Pang, Yaokun [1 ]
Yang, Xiaonian [1 ]
Gao, Guoyun [1 ]
Zhai, Junyi [1 ]
Wang, Zhong Lin [1 ,2 ]
机构：
[1] Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China
[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
来源：
ADVANCED MATERIALS | 2016年 / 28卷 / 17期
基金：
中国国家自然科学基金;
关键词：
LAYER MOS2; PHOTOCURRENT GENERATION; ELECTRIC-FIELD; PIEZOELECTRICITY; LIGHT; ELECTROLUMINESCENCE; TRANSISTORS; BEHAVIOR; JUNCTION;
D O I：
10.1002/adma.201506472
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A plasma-induced p-type MoS2 flake and n-type ZnO film diode, which exhibits an excellent rectification ratio, is demonstrated. Under 365 nm optical irradiation, this p-n diode shows a strong photoresponse with an external quantum efficiency of 52.7% and a response time of 66 ms. By increasing the pressure on the junction to 23 MPa, the photocurrent can be enhanced by a factor of four through the piezophototronic effect. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：3391 / 3398
页数：8
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