Modeling of optical and geometrical data of Al thin films on GaAs

被引:1
|
作者
Rais, A [1 ]
机构
[1] Sultan Qaboos Univ, Coll Sci, Dept Phys, Muscat, Oman
关键词
surface plasmons; Al thin films; GaAs;
D O I
10.1016/S0167-577X(02)00949-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we show how optical excitation of surface plasmons (SPs) can be used to obtain optical and geometrical parameters of specific layers in multilayered thin film systems. The optimum coupling phenomenon between incoming p-polarized light and SPs appears as a minimum in the reflectance that is calculated using a standard matrix formalism. The sensitive dependence of the reflectance minimum on optical and geometrical parameters suggests that they can be determined accurately by fitting the measured attenuated total reflectance (ATR) to the matrix-calculated reflectance using the Simplex minimization method. The procedure is applied to the multilayered system: Prism/Air gap/Al-oxide/Al/GaAs. At fixed incident light wavelength, the fitting parameters are the Al-oxide optical constant and the thickness of the air gap, Al-oxide and Al layers. Fortran codes are implemented for the reflectance calculations and the fitting procedures. The results show that the theoretical reflectance fits well the measured ATR at 633-nm wavelength. Moreover, the modeled Al-oxide optical constant at this wavelength agrees well with the literature. However, the reflectance fits are less good at 590- and 458-nm wavelengths and their modeled Al-oxide optical constants show a dispersion effect in disagreement with the literature. The modeled geometrical parameters are consistent with the nominal values. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码:1160 / 1166
页数:7
相关论文
共 50 条
  • [31] Ultrafast nonlinear optical response of weakly confined excitons in GaAs thin films
    Kojima, O.
    Isu, T.
    Ishi-Hayase, J.
    Sasaki, M.
    Tsuchiya, M.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5, 2007, 4 (05): : 1731 - +
  • [32] EFFECTS OF NEUTRON IRRADIATION ON OPTICAL PROPERTIES OF THIN FILMS AND BULK GAAS AND GAP
    PANKEY, T
    DAVEY, JE
    JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) : 697 - &
  • [33] OPTICAL-PROPERTIES OF POLYCRYSTALLINE THIN-FILMS OF GAAS OBTAINED BY MBD
    PAPARODITIS, C
    RIDEAU, A
    MONNOM, G
    GAUCHEREL, P
    JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 159 - 164
  • [34] Ultrafast All-Optical Control of Excitons Confined in GaAs Thin Films
    Kojima, Osamu
    Miyagawa, Ayumi
    Kita, Takashi
    Wada, Osamu
    Isu, Toshiro
    APPLIED PHYSICS EXPRESS, 2008, 1 (11) : 1124011 - 1124013
  • [35] Optical response in amorphous GaAs thin films prepared by pulsed laser deposition
    Kiwa, T
    Kawashima, I
    Nashima, S
    Hangyo, M
    Tonouchi, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (11): : 6304 - 6308
  • [36] α-β Phase transition in MnAs/GaAs(001) thin films:: An optical spectroscopic investigation
    Vidal, F.
    Pluchery, O.
    Witkowski, N.
    Garcia, V.
    Marangolo, M.
    Etgens, V. H.
    Borensztein, Y.
    PHYSICAL REVIEW B, 2006, 74 (11)
  • [37] Ultrafast optical Kerr effect of excitons weakly confined in GaAs thin films
    Kanno, Atsushi
    Katouf, Redouane
    Kojima, Osamu
    Ishi-Hayase, Junko
    Tsuchiya, Masahiro
    Isu, Toshiro
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1, 2008, 5 (01): : 360 - 363
  • [38] Depolarization effect on optical control of exciton states confined in GaAs thin films
    Yamashita, Takae
    Kojima, Osamu
    Kita, Takashi
    Isu, Toshiro
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (04)
  • [39] GEOMETRICAL RESONANCE EFFECTS IN THIN SUPERCONDUCTING FILMS
    NEDELLEC, P
    ANNALES DE PHYSIQUE, 1977, 2 (04) : 253 - 290
  • [40] Extraordinary hall effect in coherent epitaxial τ (Mn, Ni)Al thin films on GaAs
    Sands, T.
    De Boeck, J.
    Harbison, J.P.
    Scherer, A.
    Gilchrist, H.L.
    Cheeks, T.L.
    Miceli, P.F.
    Ramesh, R.
    Keramidas, V.G.
    Journal of Applied Physics, 1993, 73 (10 pt 2A):