Disorder-induced Raman scattering in MgXZn1-XTe mixed crystals

被引：8
|
作者：
Yoon, CS [1 ]
Kim, BH
Cha, D
Kim, YS
Chung, SJ
Ko, JG
Kim, CD
Park, HL
Kim, WT
机构：
[1] Kunsan Natl Univ, Dept Phys, Kunsan 573701, South Korea
[2] Mokpo Natl Univ, Dept Phys, Mokpo 534729, South Korea
[3] Yonsei Univ, Dept Phys, Seoul 120749, South Korea
[4] Chonnam Natl Univ, Dept Phys, Kwangju 500757, South Korea
来源：
SOLID STATE COMMUNICATIONS | 1998年 / 106卷 / 08期
关键词：
semiconductors; crystal growth; order-disorder effects; phonons; inelastic light scattering;
D O I：
10.1016/S0038-1098(98)00124-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The phonon spectra of the mixed crystal MgXZn1-XTe (0 less than or equal to X less than or equal to 0.48) in the zinc-blende phase are investigated by Raman scattering. The phonon frequencies exhibit a dependence on the Mg concentration. The disorder induced one-phonon and two-phonon modes are present in the Raman spectra for X greater than or equal to 0.16. The Raman intensity ratio between first-order and second-order phonon modes was a good indicator to characterize the degree of disorder in the mixed crystals. (C) 1998 Published by Elsevier Science Ltd.
引用
收藏
页码：481 / 484
页数：4
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