Segregation coefficient of impurities at polycrystalline Si/HfO2 interfaces

被引：0

作者：

Suzuki, K ^{[1
]}

Minakata, H ^{[1
]}

Sakota, T ^{[1
]}

Yamaguchi, M ^{[1
]}

Tamura, Y ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Silicon Labs Ltd, Atsugi, Kanagawa 24301971, Japan

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 01期

关键词：

HfO2; segregation;

D O I：

10.1016/j.sse.2004.06.018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We evaluated the segregation coefficient m of B, P, and As at the polycrystalline Si/HfO2 interface. The m values of B, P, and As are between 0.3 and 1 and are similar to that of B at the polycrystalline Si/SiO2 interface. The m value of P at the polycrystalline Si/ SiO2 interface is around 1000, and this high value largely keeps P from penetrating the thin gate SiO2. Therefore, the penetration of B, P and As through a poly-Si/HfO2 layer is expected to be significant since the diffusion coefficients of P and As in HfO2 are also high, making the use of a cover layer indispensable for p(+) and n(+) polycrystalline silicon gate devices. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：137 / 139

页数：3

共 50 条

[11] Band bending and band alignment at HfO2/HfSixOy/Si interfaces
Song, Weijie
Yoshitake, Michiko
Tan, Ruiqin
Kojima, Isao
APPLIED SURFACE SCIENCE, 2007, 253 (07) : 3508 - 3511
[12] Atomic rearrangements in HfO2/Si1-xGex interfaces
Cho, Deok-Yong
Oh, S. -J.
Park, Tae Joo
Hwang, Cheol Seong
APPLIED PHYSICS LETTERS, 2006, 89 (13)
[13] Diffusion coefficient of B in HfO2
Suzuki, K
Tashiro, H
Morisaki, Y
Sugita, Y
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (06) : 1550 - 1552
[14] Diffusion coefficient of As and P in HfO2
Suzuki, K
Tashiro, H
Morisaki, Y
Sugita, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (12): : 8286 - 8287
[15] Ferroelectric HfO2 formation by annealing of a HfO2/Hf/HfO2/Si(100) stacked structure
Kim, Min Gee
Inoue, Hidefumi
Ohmi, Shun-ichiro
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58
[16] Band alignments in oxygen-deficient HfO2/Si(100) interfaces
Cho, Deok-Yong
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 51 (02) : 647 - 650
[17] Role of oxygen vacancy in HfO2/SiO2/Si(100) interfaces
Cho, Deok-Yong
Oh, S. -J.
Chang, Y. J.
Noh, T. W.
Jung, Ranju
Lee, Jae-Cheol
APPLIED PHYSICS LETTERS, 2006, 88 (19)
[18] Si nanocrystal synthesis in HfO2/SiO/HfO2 multilayer structures
Perego, M.
Seguini, G.
Wiemer, C.
Fanciulli, M.
Coulon, P-E
Bonafos, C.
NANOTECHNOLOGY, 2010, 21 (05)
[19] Dynamic segregation of metallic impurities at SiO2/Si interfaces
De Luca, A.
Portavoce, A.
Texier, M.
Burle, N.
Pichaud, B.
18TH MICROSCOPY OF SEMICONDUCTING MATERIALS CONFERENCE (MSM XVIII), 2013, 471
[20] Effect of H and Si impurities on device performance based on HfO2 gate oxide
Kang, Joongoo
Kim, Dae Yeon
Chang, K. J.
PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 263 - +

← 1 2 3 4 5 →