Synthesis of nanocrystalline half-Heusler TiNiSn by mechanically activated annealing

被引:20
|
作者
Karati, Anirudha [1 ]
Murty, B. S. [2 ]
机构
[1] Indian Inst Technol, Dept Chem, Madras 600036, Tamil Nadu, India
[2] Indian Inst Technol, Dept Met & Mat Engn, Madras 600036, Tamil Nadu, India
关键词
Mechanically activated annealing; Nanocrystalline materials; Half-Heusler; TiNiSn; Electron microscopy; Thermoelectric; THERMOELECTRIC PROPERTIES;
D O I
10.1016/j.matlet.2017.06.068
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Mechanically activated annealing was employed successfully for the synthesis of nanocrystalline half-Heusler (TiNiSn) alloy for the first time. TiNiSn could be synthesized by annealing, after 5 h of mechanical alloying of equiatomic elemental blend, at a temperature as low as 600 degrees C in 2 h. The nanocrystalline nature and resultant increased surface area coupled with large number of defects induced by mechanical alloying has resulted in a significant reduction in temperature and time of annealing in comparison to earlier reports ( 800 degrees C-400 h). This could lead to energy efficient low temperature synthesis of nanocrystalline half-Heusler alloys for thermoelectric and magnetic applications. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:114 / 117
页数:4
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