Tungsten chemical mechanical polishing

被引：39

作者：

Elbel, N ^{[1
]}

Neureither, B ^{[1
]}

Ebersberger, B ^{[1
]}

Lahnor, P ^{[1
]}

机构：

[1] Siemens AG, Components Grp, D-81739 Munich, Germany

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1998年 / 145卷 / 05期

关键词：

D O I：

10.1149/1.1838533

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

After chemical mechanical polishing (CMP) of oxides became a standard method for global planarization, the polishing of metals is now being embraced by manufacturing. Although tungsten CMP has been used for subhalf-micron technologies for quite some time, there is still a lack of theoretical understanding and modeling of the metal CMP processes. This paper presents a mathematical approach to describe erosion and dishing for tungsten CMP. The model, which represents the pad by a network of springs, simulates the profile of a dished tungsten line. The calculated data are then compared with experimental data.

引用

页码：1659 / 1664

页数：6

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