Tungsten chemical mechanical polishing

被引:39
|
作者
Elbel, N [1 ]
Neureither, B [1 ]
Ebersberger, B [1 ]
Lahnor, P [1 ]
机构
[1] Siemens AG, Components Grp, D-81739 Munich, Germany
关键词
D O I
10.1149/1.1838533
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
After chemical mechanical polishing (CMP) of oxides became a standard method for global planarization, the polishing of metals is now being embraced by manufacturing. Although tungsten CMP has been used for subhalf-micron technologies for quite some time, there is still a lack of theoretical understanding and modeling of the metal CMP processes. This paper presents a mathematical approach to describe erosion and dishing for tungsten CMP. The model, which represents the pad by a network of springs, simulates the profile of a dished tungsten line. The calculated data are then compared with experimental data.
引用
收藏
页码:1659 / 1664
页数:6
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