Ion-beam-induced embedded nanostructures and nanoscale mixing

被引:27
|
作者
Satpati, B [1 ]
Satyam, PV [1 ]
Som, T [1 ]
Dev, BN [1 ]
机构
[1] Inst Phys, Bhubaneswar 751005, Orissa, India
关键词
D O I
10.1063/1.1794899
中图分类号
O59 [应用物理学];
学科分类号
摘要
Megaelectron volts ion-induced effects for discontinuous gold nanoislands and for continuous gold films on silicon substrate have been studied. Irradiation was carried out with 1.5 MeV Au2+ ions at room temperature to various fluences. Cross-sectional transmission electron microscopy and Rutherford backscattering spectrometry are used to study the ion-beam mixing in Au/Si systems. At a fluence of 1x10(14) ions cm(-2), a material push-in effect and a metastable Au-Si phase formation have been observed for Au nanoislands, while no push in or mixing has been observed for the case of continuous films. The mixed phase of Au-Si system is found to be crystalline in nature. The material push- in and ion-beam mixing effects that are observed in case of nanoislands appear to be due to combined effect of capillary driving force, ion-induced viscous flow, and ion-induced energy spike effects. (C) 2004 American Institute of Physics.
引用
收藏
页码:5212 / 5216
页数:5
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