Luminescence enhancement and carrier kinetics of disordered quantum-wire superlattices

被引：1
|
作者：
Sasaki, A [1 ]
Okanishi, R
Shibakawa, S
Liu, XQ
Wang, XL
Ogura, M
机构：
[1] Osaka Electrocommun Univ, Dept Elect, Neyagawa, Osaka 5728530, Japan
[2] Osaka Electrocommun Univ, Acad Frontier Promot Ctr, Neyagawa, Osaka 5728530, Japan
[3] Natl Adv Ind Sci & Technol, Photon Res Inst, Tsukuba, Ibaraki 3058568, Japan
[4] JST, CREST, Kawaguchi 3320012, Japan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期
关键词：
disordering effects; luminescence enhancement; carrier localization; carrier transfer; quantum wire;
D O I：
10.1016/S1386-9477(02)00743-9
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The luminescence intensity is strongly enhanced by introducing a size disordering into the AlGaAs/GaAs quantum-wire (QWR) superlattice (SL). The intensity increases with temperature due to the carrier transfer from the SL to the QWR and then decreases less than that of a regularly ordered QWRSL due to the carrier localization caused by the size disordering. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：177 / 179
页数：3
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