Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

被引：29
|
作者：
Pala, N
Rumyantsev, S
Shur, M
Gaska, R
Hu, X
Yang, J
Simin, G
Khan, MA
机构：
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180 USA
[3] Sensor Elect Technol Inc, Columbia, SC 29209 USA
[4] Univ S Carolina, Dept Elect & Comp Engn, Columbia, SC 29208 USA
来源：
SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 06期
关键词：
low frequency noise; l/f noise; generation-recombination noise; activation energy;
D O I：
10.1016/S0038-1101(02)00475-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors was measured at room and elevated temperatures as function of gate and drain voltages. Both 1/f noise and generation-recombination (g-r) noises were observed. The Hooge parameter, alpha, was estimated to be close to 1 x 10(-3). The activation energy for observed g-r noise was found to be E-a similar to 1.6 eV (the largest reported activation energy for GaN based devices). The measurements also confirmed that the double heterostructure provided superior carrier confinement in 2D channel even at high carrier concentrations. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1099 / 1104
页数：6
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