A review of electron spin resonance spectroscopy of defects in thin film SiO2 on Si

The charge trapping properties of the gate oxide and its interface with silicon limit the performance, acid reliability of mental oxide silicon (MOS) field effect transistors (MOSFETs), The technique of electron spin resonance (ESR) has both the sensitivity and analytical power to provide a detailed chemical and physical understanding of the point defects responsible for charge trapping, We present a comprehensive review of ESR studies of defects in SiO2 and defects at and near the Si/SiO2 interface in MOS systems. These studies provide a first order understanding of trapping defects in these systems. Such an understanding is technologically useful; without it, attempts to improve device performance or eliminate reliability problems caused by these centers is arguably little more than guess work.