Formation of perovskite-type oxide electrode Si substrate structures

The suitable combinations of a bottom electrode and a buffer layer for the formation of a perovskite-type oxide/electrode structure on the Si substrate were searched. The fabrication conditions of an SrTiO3 (STO) buffer layer and a Pt electrode layer on Si (100) substrates were also optimized. An electric-field-induced insulator-metal (IM) transition of Pr1-xCaxMnO3 (PCMO, x = 0.5) layer on several types of electrodes were observed. The PCMO layer on a Pt / Ti / SiO2 / Si structure showed an IM transition at higher temperature (195 K) and at lower applied-voltage (0.5 V) compared to the PCMO on SrBuO3 (SRO) / STO / Si. La0.6Sr0.4MnO3 (LSMO) on SRO / STO / Si, on the other hand, showed good magnetic properties comparable to those of bulk LSMO.