Electrical properties in Si/Si1-xGex/Si p-type modulation doped heterostructures

被引：0
|
作者：
Hwang, YT [1 ]
Kim, HS [1 ]
Woo, SJ [1 ]
Lim, SH [1 ]
Lee, HJ [1 ]
机构：
[1] JEONBUK NATL UNIV,DEPT PHYS,JEONJU 560756,SOUTH KOREA
来源：
COMPOUND SEMICONDUCTORS 1995 | 1996年 / 145卷
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Si/Si0.79Ge0.21 p-type modulation-doped single heterostructures were grown by molecular beam epitaxy with different growth temperatures and spacer layer thicknesses. The growth temperature dependence of hole mobility at low temperature is examined in the temperature range from 530 to 730 degrees C. The hole mobility increases with increasing growth temperature up to 680 degrees C and then decreases at higher growth temperature. This demonstrates that the dependence of hole mobility on growth temperature may be ascribed to the improvement of interface with increasing temperature.
引用
收藏
页码：497 / 500
页数：4
相关论文
共 50 条
  • [1] HIGH HOLE MOBILITY IN SI/SI1-XGEX/SI P-TYPE MODULATION-DOPED DOUBLE HETEROSTRUCTURES
    WANG, PJ
    MEYERSON, BS
    FANG, FF
    NOCERA, J
    PARKER, B
    APPLIED PHYSICS LETTERS, 1989, 55 (22) : 2333 - 2335
  • [2] TRANSPORT PROPERTY OF SI SI1-XGEX SI P-TYPE MODULATION-DOPED DOUBLE-HETEROSTRUCTURE
    JIANG, RL
    LIU, JL
    ZHENG, YD
    LI, HF
    ZHENG, HZ
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) : 2544 - 2546
  • [3] Electrical assessment of Si1-xGex/Si heterostructures
    Lysenko, V.S.
    Tyagulski, I.P.
    Gomeniuk, Y.V.
    Osiyuk, I.N.
    Patel, C.J.
    Nur, O.
    Willander, M.
    Journal De Physique. IV : JP, 1998, 8 (03): : 3 - 87
  • [4] The electrical assessment of Si1-xGex/Si heterostructures
    Lysenko, VS
    Tyagulski, IP
    Gomeniuk, YV
    Osiyuk, IN
    Patel, CJ
    Nur, O
    Willander, M
    JOURNAL DE PHYSIQUE IV, 1998, 8 (P3): : 87 - 90
  • [5] HOLE TRANSPORT-PROPERTIES OF SI/SI1-XGEX MODULATION-DOPED HETEROSTRUCTURES
    JIANG, RL
    LIU, JL
    ZHENG, YD
    LI, HF
    ZHENG, HZ
    SUPERLATTICES AND MICROSTRUCTURES, 1994, 16 (04) : 375 - 377
  • [6] ELECTROOPTICAL MODULATION IN SI1-XGEX SI AND RELATED HETEROSTRUCTURES
    SOREF, RA
    FRIEDMAN, L
    INTERNATIONAL JOURNAL OF OPTOELECTRONICS, 1994, 9 (02): : 205 - 210
  • [7] STEBIC of Si/Si1-xGex/Si heterostructures
    Brown, PD
    Humphreys, CJ
    ELECTRON MICROSCOPY AND ANALYSIS 1995, 1995, 147 : 285 - 288
  • [8] Intersubband absorption in modulation-doped p-type Si/Si1-xGex quantum wells: a systematic study
    Fromherz, Thomas
    Koppensteiner, Ewald
    Helm, Manfred
    Bauer, Gunther
    Nutzel, Joachim
    Abstreiter, Gerhard
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (4 B): : 2361 - 2364
  • [9] CHARGE-TRANSFER IN P(+)-SI SI1-XGEX MODULATION-DOPED HETEROSTRUCTURES GROWN BY RTCVD
    WARREN, P
    SAGNES, I
    DUTARTRE, D
    BADOZ, PA
    BERROIR, JM
    GULDNER, Y
    VIEREN, JP
    VOOS, M
    MICROELECTRONIC ENGINEERING, 1994, 25 (2-4) : 171 - 176
  • [10] Anomalous electrical properties of Si/Si1-xGex heterostructures with an electron transport channel in Si layers
    Orlov, L. K.
    Horvath, Z. J.
    Orlov, M. L.
    Lonchakov, A. T.
    Ivina, N. L.
    Dobos, L.
    PHYSICS OF THE SOLID STATE, 2008, 50 (02) : 330 - 340
12345