The preparation of Ag2ZnSnS4 homojunction solar cells

被引：23
|
作者：
Ma, Changhao [1 ]
Guo, Huafei [1 ]
Zhang, Kezhi [1 ]
Li, Yan [1 ]
Yuan, Ningyi [1 ]
Ding, Jianning [1 ,2 ]
机构：
[1] Changzhou Univ, Sch Mat Sci & Engn, Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Jiangsu Prov Cultivat Base State Key Lab Photovol, Changzhou 213164, Peoples R China
[2] Jiangsu Univ, Micro Nano Sci & Technol Ctr, Zhenjiang 212013, Peoples R China
来源：
MATERIALS LETTERS | 2017年 / 207卷
基金：
中国国家自然科学基金;
关键词：
Ag2ZnSnS4(AZTS); Homojunction; Thin films; Solar energy materials;
D O I：
10.1016/j.matlet.2017.07.089
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work, an Ag2ZnSnS4 (AZTS) homojunction film was obtained by the one-time introduction of sulfur on a laminated structure precursor film. Furthermore, this homojunction film was incorporated in the solar cell with a structure of Mo/AZTS/i-ZnO/ITO and an efficiency of 0.87% was achieved. This is the first report on the fabricated quaternary semiconductor homojunction solar cells. This work provides a new idea and method for the fabrication of thin film solar cells. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：209 / 212
页数：4
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