共 50 条
- [42] The effect of the nucleation layer on the low temperature growth of GaN using a remote plasma enhanced ultrahigh vacuum chemical vapor deposition (RPE-UHVCVD) NITRIDE SEMICONDUCTORS, 1998, 482 : 75 - 80
- [45] Low-temperature SiO2 formation by ultrahigh-vacuum chemical vapor deposition using plasma-activated oxygen and disilane ADVANCED METALLIZATION CONFERENCE 2000 (AMC 2000), 2001, : 541 - 546
- [47] High-temperature low-pressure chemical vapor deposition of β-Ga2O3 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2020, 38 (05):
- [50] Reactivity of thin metal films on sodium beta'' alumina ceramic in high temperature, low pressure sodium vapor SPACE TECHNOLOGY AND APPLICATIONS INTERNATIONAL FORUM-2001, 2001, 552 : 1100 - 1106