Construction and performance of an ultrahigh vacuum-compatible high temperature vapor dosing system for low vapor pressure compounds

被引:2
|
作者
Thompson, L [1 ]
Lee, JG [1 ]
Maksymovych, P [1 ]
Ahner, J [1 ]
Yates, JT [1 ]
机构
[1] Univ Pittsburgh, Ctr Surface Sci, Dept Chem, Pittsburgh, PA 15260 USA
来源
关键词
D O I
10.1116/1.1550011
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A gas dosing system for the quantitative deposition of low vapor pressure compounds onto surfaces in an ultrahigh vacuum system is reported. The dosing system is maintained at elevated temperature to achieve sufficiently high gas pressure for rapid transfer to the surface. Dosing is achieved through a heated calibrated leak valve which connects the high temperature source system to an internal tubular doser. The leak valve and the internal doser head are heated to a higher temperature than the source system to prevent condensation of the compound., The quantitative behavior of this doser is demonstrated for two low vapor pressure compounds. (C) 2003 American Vacuum Society.
引用
收藏
页码:491 / 494
页数:4
相关论文
共 50 条
  • [1] IMPROVED TECHNIQUE FOR MEASURING THE VAPOR-PRESSURE OF VACUUM-COMPATIBLE FLUIDS
    LAURENSON, L
    TROUP, AP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03): : 2817 - 2821
  • [2] Design of a compact ultrahigh vacuum-compatible setup for the analysis of chemical vapor deposition processes
    Weiss, Theodor
    Nowak, Martin
    Mundloch, Udo
    Zielasek, Volkmar
    Kohse-Hoeinghaus, Katharina
    Baeumer, Marcus
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2014, 85 (10):
  • [3] A SIMPLE MEANS FOR REPRODUCIBLY DOSING LOW VAPOR-PRESSURE AND OR REACTIVE GASES TO SURFACES IN ULTRAHIGH-VACUUM
    HENN, FC
    BUSSELL, ME
    CAMPBELL, CT
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (01): : 10 - 13
  • [4] LOW-TEMPERATURE SILICON EPITAXY BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION
    MEYERSON, BS
    APPLIED PHYSICS LETTERS, 1986, 48 (12) : 797 - 799
  • [5] Cryogenic stabilization of high vapor pressure samples for surface analysis under ultrahigh vacuum conditions
    Bruckner, JJ
    Wozniak, K
    Hardcastle, S
    Sklyarov, A
    Seal, S
    Barr, TL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (05): : 2668 - 2675
  • [6] High quality SiGe layer deposited by a new ultrahigh vacuum chemical vapor deposition system
    Luo, GL
    Lin, XF
    Chen, PY
    Tsian, PX
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2000, 16 (01) : 94 - 96
  • [8] LOW-TEMPERATURE SILICON EPITAXY BY HOT-WALL ULTRAHIGH-VACUUM LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION TECHNIQUES
    MEYERSON, BS
    GANNIN, E
    SMITH, DA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : C355 - C355
  • [9] Design and construction of special vacuum-drying apparatus for dehydration of products with low vapor pressure
    Smith, GF
    Rees, OW
    INDUSTRIAL AND ENGINEERING CHEMISTRY, 1931, 23 : 1328 - 1330
  • [10] Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition
    Loh, T. H.
    Nguyen, H. S.
    Tung, C. H.
    Trigg, A. D.
    Lo, G. Q.
    Balasubramanian, N.
    Kwong, D. L.
    Tripathy, S.
    APPLIED PHYSICS LETTERS, 2007, 90 (09)