Electrical and optical behavior of the SiC photodetectors

被引：0

作者：

Draghici, F ^{[1
]}

Mitu, F ^{[1
]}

Brezeanu, G ^{[1
]}

Badila, M ^{[1
]}

Boianceanu, C ^{[1
]}

Agache, P ^{[1
]}

Enache, I ^{[1
]}

机构：

[1] Univ Politehn Bucuresti, Bucharest, Romania

来源：

CAS: 2002 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper presents an electrical and optical investigation of Schottky transparent contact UV detectors build on SiC. The devices spectral analysis evinced, a relatively constant low sensitivity in range of 270-360nm completed with a peak higher sensitivity centered on 380nm for 360-400nm ranges.

引用

页码：195 / 198

页数：4

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