Electrical and optical behavior of the SiC photodetectors

被引：0
|
作者：
Draghici, F [1 ]
Mitu, F [1 ]
Brezeanu, G [1 ]
Badila, M [1 ]
Boianceanu, C [1 ]
Agache, P [1 ]
Enache, I [1 ]
机构：
[1] Univ Politehn Bucuresti, Bucharest, Romania
来源：
CAS: 2002 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2001年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper presents an electrical and optical investigation of Schottky transparent contact UV detectors build on SiC. The devices spectral analysis evinced, a relatively constant low sensitivity in range of 270-360nm completed with a peak higher sensitivity centered on 380nm for 360-400nm ranges.
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收藏
页码：195 / 198
页数：4
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