Effects of SiO2 addition on discharge characteristics of the MgO protective layer in plasma display panel

被引：10

作者：

Lee, H. K.

Kim, J. W.

Park, S. J.

Choi, S. Y.

机构：

[1] Yonsei Univ, Opt Informat Mat Res Lab, Sch New Mat Sci & Engn, Seoul 120749, South Korea

[2] Kumoh Natl Inst Technol, Sch Adv Mat & Syst Engn, Gumi 730701, South Korea

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 12期

关键词：

plasma display panel; MgO-SiO2; protective layer; crystallinity; surface roughness; discharge characteristics;

D O I：

10.1016/j.tsf.2006.10.022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to improve the discharge characteristics of MgO protective layer, SiO2 was added to MgO thin films. The MgO-SiO2 thin films were deposited by electron beam evaporation method. The crystallinity and surface roughness of thin films were determined by XRD and AFM. Discharge characteristics of MgO-SiO2 protective layers were observed by changes in discharging voltages and SEE and memory coefficients as a function of Si concentration in the protective layer. The discharge characteristics of MgO-SiO2 layer were mainly affected by changes in crystallinity and surface roughness of films with Si concentration in the range of present study. With addition of 12.5 Si at.% in MgO-SiO2 protective layer, the discharge voltages and memory and SEE coefficients were considerably improved in comparison to pure MgO protective layer. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：5113 / 5117

页数：5

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