Epitaxial growth of CdTe(001) studied by scanning tunnelling microscopy

被引:18
|
作者
Martrou, D [1 ]
Eymery, J [1 ]
Gentile, P [1 ]
Magnea, N [1 ]
机构
[1] CEA, DRFMC, SP2M, F-38054 Grenoble, France
关键词
surfaces; vicinal surfaces; scanning tunnelling microscopy;
D O I
10.1016/S0022-0248(98)80045-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Scanning tunnelling microscopy is used to study the growth mechanisms of CdTe(1 0 0) in molecular beam epitaxy. The 2D growth proceeds by the formation of square-shaped islands with (1 0 0) edges. This effect leads to the self-organisation of terraces for vicinal surfaces with (1 0 0) steps. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:203 / 207
页数:5
相关论文
共 50 条
  • [31] Growth of erbium silicide nanowires on Si(001) surface studied by scanning tunneling microscopy
    Zhou, W
    Wang, SH
    Ji, T
    Zhu, Y
    Cai, Q
    Hou, XY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (3B): : 2059 - 2062
  • [32] The growth of thin NiO films on Ag(001) studied by scanning tunneling microscopy and spectroscopy
    Grosser, Stephan
    Hagendorf, Christian
    Neddermeyer, Henning
    Widdra, Wolf
    SURFACE AND INTERFACE ANALYSIS, 2008, 40 (13) : 1741 - 1746
  • [33] Growth of erbium suicide nanowires on Si(001) surface studied by scanning tunneling microscopy
    Zhou, Wei
    Wang, Shuhua
    Ji, Ting
    Zhu, Yan
    Cai, Qun
    Hou, Xiaoyuan
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (3 B): : 2059 - 2062
  • [34] Atomic hydrogen cleaning of GaAs(001): a scanning tunnelling microscopy study
    Khatiri, A
    Ripalda, JM
    Krzyzewski, TJ
    Bell, GR
    McConville, CF
    Jones, TS
    SURFACE SCIENCE, 2004, 548 (1-3) : L1 - L6
  • [35] EPITAXIAL-GROWTH OF AU ON AG(110) STUDIED BY SCANNING-TUNNELING-MICROSCOPY
    ROUSSET, S
    CHIANG, S
    FOWLER, DE
    CHAMBLISS, DD
    SURFACE SCIENCE, 1993, 287 (pt B) : 941 - 945
  • [36] Epitaxial growth simulations of CdTe(111)B on Si(001)
    Oh, J
    Grein, CH
    JOURNAL OF CRYSTAL GROWTH, 1998, 193 (1-2) : 241 - 251
  • [37] INVESTIGATION OF THE EPITAXIAL-GROWTH MECHANISM OF ZNTE ON (001) CDTE
    TATARENKO, S
    JOUNEAU, PH
    SAMINADAYAR, K
    EYMERY, J
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) : 3104 - 3110
  • [38] NUCLEATION AND GROWTH OF EPITAXIAL SILICON ON SI(001) AND SI(111) SURFACES BY SCANNING TUNNELING MICROSCOPY
    HAMERS, RJ
    KOHLER, UK
    DEMUTH, JE
    ULTRAMICROSCOPY, 1989, 31 (01) : 10 - 19
  • [39] SCANNING TUNNELLING MICROSCOPY
    TROMP, RM
    VACUUM, 1988, 38 (4-5) : 427 - 427
  • [40] Phase defects on Si(100) surface, studied by scanning tunnelling microscopy
    Shigekawa, H
    Miyake, K
    Ishida, M
    Ozawa, S
    Hata, K
    DEFECT AND DIFFUSION FORUM/JOURNAL, 1998, 161 : 57 - 64