Processes and device technologies for AlGaN/GaN high electron mobility transistors

被引：0
|
作者：
Adesida, I. [1 ]
Kumar, V. [1 ]
Mohammed, F. [1 ]
Wang, L. [1 ]
Basu, A. [1 ]
Kim, D. -H. [1 ]
Lanford, W. [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA
来源：
2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The AlInGaN-based high electron mobility transistor (HEMT) has proven to be the leading candidate for simultaneously realizing ultra-high frequency and ultra-high power amplifiers. The potential for these devices extends into operation in the mm-wave regime. Processes and device technologies that have resulted in these tremendous improvements are addressed.
引用
收藏
页码：140 / +
页数：2
相关论文
共 50 条
  • [41] Mechanical Analysis of Stretchable AlGaN/GaN High Electron Mobility Transistors
    Tompkins, R. P.
    Mahaboob, I.
    Shahedipour-Sandvik, F.
    Lazarus, N.
    WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 17, 2016, 72 (05): : 89 - 95
  • [42] Electrical characterization of AlGaN/GaN/Si high electron mobility transistors
    Mosbahi, H.
    Gassoumi, M.
    Guesmi, A.
    Bchetnia, A.
    Zaidi, M. A.
    JOURNAL OF OVONIC RESEARCH, 2022, 18 (02): : 159 - 165
  • [43] Influence of Current Collapse in AlGaN/GaN High Electron Mobility Transistors
    Patanvariya, Deven G.
    Kumar, Sudhan
    Giri, Lalat Indu
    2019 10TH INTERNATIONAL CONFERENCE ON COMPUTING, COMMUNICATION AND NETWORKING TECHNOLOGIES (ICCCNT), 2019,
  • [44] Low temperature characteristics of AlGaN/GaN high electron mobility transistors
    Lin, D. F.
    Wang, X. L.
    Xiao, H. L.
    Wang, C. M.
    Qiang, L. J.
    Feng, C.
    Chen, H.
    Hou, Q. F.
    Deng, Q. W.
    Bi, Y.
    Kang, H.
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2011, 56 (01):
  • [45] Electric Properties of AlGaN/GaN/Si High electron Mobility Transistors
    H. Mosbahi
    M. Gassoumi
    A. Bchetnia
    M.A. Zaidi
    Silicon, 2022, 14 : 7417 - 7422
  • [46] Electric Properties of AlGaN/GaN/Si High electron Mobility Transistors
    Mosbahi, H.
    Gassoumi, M.
    Bchetnia, A.
    Zaidi, M. A.
    SILICON, 2022, 14 (13) : 7417 - 7422
  • [47] Temperature Estimation of High-Electron Mobility Transistors AlGaN/GaN
    Latry, Olivier
    Joubert, Eric
    Neveu, Tristan
    Moultif, Niemat
    Ndiaye, Mohamed
    2018 19TH IEEE MEDITERRANEAN ELECTROTECHNICAL CONFERENCE (IEEE MELECON'18), 2018, : 265 - 268
  • [48] Response to anions of AlGaN/GaN high-electron-mobility transistors
    Alifragis, Y
    Georgakilas, A
    Konstantinidis, G
    Iliopoulos, E
    Kostopoulos, A
    Chaniotakis, NA
    APPLIED PHYSICS LETTERS, 2005, 87 (25) : 1 - 3
  • [49] Neutron irradiation effects on AlGaN/GaN high electron mobility transistors
    吕玲
    张进成
    薛军帅
    马晓华
    张伟
    毕志伟
    张月
    郝跃
    Chinese Physics B, 2012, (03) : 360 - 364
  • [50] AlGaN/GaN high electron mobility transistors on Si(111) substrates
    Chumbes, EM
    Schremer, AT
    Smart, JA
    Yang, Y
    MacDonald, NC
    Hogue, D
    Komiak, JJ
    Lichwalla, SJ
    Leoni, RE
    Shealy, JR
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) : 420 - 426
12345