Flexible mask specifications

被引：10
|
作者：
Nojima, S
Mimotogi, S
Itoh, M
Ikenaga, O
Hasebe, S
Hashimoto, K
Inoue, S
Goto, M
Mori, I
机构：
[1] Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
来源：
22ND ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2 | 2002年 / 4889卷
关键词：
mask specifications; lithography simulation; hot spot patterns;
D O I：
10.1117/12.469361
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A methodology for mask quality, flexible mask specifications, is proposed. The methodology consists of two major concepts. One is flexibly selected patterns to guarantee mask quality for each device and each level of devices using full-chip level lithography simulation. The other is flexibly changeable combination of each tolerance for each error component. The validity of flexible mask specifications is proved on masks of a 130nm node memory device. Using the flexible mask specifications, we have confirmed that mask-manufacturing yield rises by 20% for masks of a 175nm node memory device compared with the yield of the masks judged by conventional mask specifications.
引用
收藏
页码：187 / 196
页数：10
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