Local floating body effect in body-grounded SOI nMOSFETs

被引：0
|
作者：
Tseng, YC [1 ]
Huang, WM [1 ]
Ikegami, B [1 ]
Diaz, DC [1 ]
Ford, JM [1 ]
Woo, JCS [1 ]
机构：
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
来源：
1997 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS | 1996年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：26 / 27
页数：2
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