Modeling of anomalous current-voltage characteristics in floating body fully depleted SOI nMOSFETs

被引:0
|
作者
Feng Chia Univ, Taichung, Taiwan [1 ]
机构
来源
Solid State Electron | / 5卷 / 713-720期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Modeling of anomalous current-voltage characteristics in floating body fully depleted SOI nMOSFETs
    Yang, PC
    Liu, PS
    SOLID-STATE ELECTRONICS, 1996, 39 (05) : 713 - 720
  • [2] ANALYSIS OF CURRENT-VOLTAGE CHARACTERISTICS OF FULLY DEPLETED SOI MOSFET(S)
    YANG, PC
    LI, SS
    SOLID-STATE ELECTRONICS, 1993, 36 (05) : 685 - 692
  • [3] MODELING FOR FLOATING BODY EFFECTS IN FULLY DEPLETED SOI MOSFETS
    CHEN, HTH
    HUANG, RS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) : 583 - 590
  • [4] Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs
    Agopian, Paula Ghedini Der
    Martino, Joao Antonio
    Simoen, Eddy
    Claeys, Cor
    SOLID-STATE ELECTRONICS, 2008, 52 (11) : 1751 - 1754
  • [5] Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs
    Chan, M
    Su, P
    Wan, H
    Lin, CH
    Fung, SKH
    Niknejad, AM
    Hu, CM
    Ko, PK
    SOLID-STATE ELECTRONICS, 2004, 48 (06) : 969 - 978
  • [6] Modeling of Current-Voltage Characteristics of the Photoactivated Device Based on SOI Technology
    Abraham, Doron
    Chelly, Avraham
    Elbaz, David
    Schiff, Shimron
    Nabozny, Michah
    Zalevsky, Zeev
    ACTIVE AND PASSIVE ELECTRONIC COMPONENTS, 2012, 2012
  • [7] Low temperature operation of 0.13 μm Partially-Depleted SOI nMOSFETs with floating body
    Pavanello, MA
    Martino, JA
    Mercha, A
    Rafi, JM
    Simoen, E
    Claeys, C
    van Meer, H
    De Meyer, K
    JOURNAL DE PHYSIQUE IV, 2002, 12 (PR3): : 31 - 34
  • [8] Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique
    Li, Yangyang
    Li, Xiaojing
    Li, Bo
    Gao, Linchun
    Yan, Weiwei
    Wang, Fangfang
    Li, Duoli
    Zeng, Chuanbin
    Luo, Jiajun
    Han, Zhengsheng
    IEEE ACCESS, 2019, 7 : 115989 - 115996
  • [9] ANOMALOUS SUBTHRESHOLD CURRENT-VOLTAGE CHARACTERISTICS OF N-CHANNEL SOI MOSFET'S.
    Fossum, Jerry G.
    Sundaresan, Ravishankar
    Matloubian, Mishel
    Electron device letters, 1987, EDL-8 (11): : 544 - 546
  • [10] MODELING THE IV CHARACTERISTICS OF FULLY DEPLETED SUBMICROMETER SOI MOSFETS
    HSIAO, TC
    KISTLER, NA
    WOO, JCS
    IEEE ELECTRON DEVICE LETTERS, 1994, 15 (02) : 45 - 47