A study on N2O direct oxidation process with re-oxidation annealing for the improvement of interface properties in 4H-SiC MOS capacitor

被引：4
|
作者：
Cho, Doohyung [1 ]
Park, Kunsik [1 ]
Yoo, Seongwook [1 ]
Kim, Sanggi [1 ]
Lee, Jinhwan
Kim, Kwangsoo
机构：
[1] ETRI, Convergence Component & Mat Res Lab, Daejeon 34129, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2017年 / 71卷 / 03期
关键词：
4H-SiC; N2O direct oxidation; Re-oxidation; POA; Interface trap density; MOS capacitor; XPS; GATE OXIDES; THERMAL-OXIDATION; SILICON; SEMICONDUCTOR;
D O I：
10.3938/jkps.71.150
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The effect of N2O direct oxidation processes with re-oxidation on SiC/SiO2 interface characteristics has been investigated. With different oxidation and post oxidation annealing (POA) processes, the flat-band voltage, effective dielectric charge density, and interface trap density are obtained from the capacitance-voltage curves. For the proposed N2O direct oxidation processes with re-oxidation, oxides were grown in N2O ambient, diluted in high-purity N-2 to 10% concentration, for 5 h at 1230 A degrees C. After the growth, some samples were annealed additionally at 1200 A degrees C in O-2 or H2O for 20 min. N2O direct oxidation with re-oxidation processes was confirmed that SiC/SiO2 interface properties and dielectric stability have better performance than with other conventional oxidation processes. This oxidation technique is expected to improve gate dielectric stability for application to SiC MOS devices; in particular, it can be used to obtain high-quality SiC/SiO2 interface properties.
引用
收藏
页码：150 / 155
页数：6
相关论文
共 50 条
  • [41] Effect of post-oxidation-annealing in hydrogen on SiO2/4H-SiC interface
    Suzuki, S
    Fukuda, K
    Okushi, H
    Nagai, K
    Sekigawa, T
    Yoshida, S
    Tanaka, T
    Arai, K
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1073 - 1076
  • [42] Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors
    Jia, Yifan
    Lv, Hongliang
    Song, Qingwen
    Tang, Xiaoyan
    Xiao, Li
    Wang, Liangyong
    Tang, Guangming
    Zhang, Yimen
    Zhang, Yuming
    APPLIED SURFACE SCIENCE, 2017, 397 : 175 - 182
  • [43] Interfacial properties of SiO2 grown on 4H-SiC:: comparison between N2O and wet O2 oxidation ambient
    Poggi, Antonella
    Moscatelli, Francesco
    Scorzoni, Andrea
    Marino, Giovanni
    Nipoti, Roberta
    Sanmartin, Michele
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 979 - 982
  • [44] Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance microwave nitrogen plasma post-oxidation annealing
    Zhu, Qiaozhi
    Qin, Fuwen
    Li, Wenbo
    Wang, Dejun
    PHYSICA B-CONDENSED MATTER, 2014, 432 : 89 - 95
  • [45] Effect of the oxidation process on SiO2/4H-SiC interface electrical characteristics
    Palmieri, R.
    Boudinov, H.
    Radtke, C.
    da Silva, E. F., Jr.
    APPLIED SURFACE SCIENCE, 2008, 255 (03) : 706 - 708
  • [46] XPS study of the electronic properties of the Ce/4H-SiC interface, and the formation of the SiO2/Ce2Si2O7/4H-SiC interface structure upon oxidation
    Kildemo, M.
    Grossner, U.
    Svensson, B. G.
    Raaen, S.
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 549 - +
  • [47] Reduction of interface trap density in 4H-SiC MOS by high-temperature oxidation
    Okuno, E
    Amano, S
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 989 - 992
  • [48] Difference of Near-Interface SiO2 Structures between O2-Oxidation and H2O-Oxidation of 4H-SiC (0001) and Its Impact on MOS Interface Characteristics
    Kita, K.
    Hirai, H.
    Ishinoda, K.
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, 2017, 80 (07): : 123 - 128
  • [49] A study of the influence of N2O and N2 annealing processes on 4H-SiC MOS structures with deposited TEOS SiO2 as gate oxide
    Pérez-Tomás, A
    Godignon, P
    Mestres, N
    Tournier, D
    Millán, J
    2005 SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS, 2005, : 79 - 82
  • [50] Investigation of 4H-SIC MOS capacitors annealed in diluted N2O at different temperatures
    Zhao, P
    Rusli
    Liu, Y
    Tin, CC
    Zhu, WG
    Ahn, J
    MICROELECTRONIC ENGINEERING, 2006, 83 (01) : 61 - 64
12345