Anti-Colliding Design for Monolithic Passively Mode-Locked Semiconductor Lasers

被引:0
|
作者
Javaloyes, J. [1 ]
Balle, S. [1 ]
机构
[1] Univ Illes Balears, Dept Fis, E-07122 Palma de Mallorca, Spain
关键词
PULSE GENERATION; FEMTOSECOND; LOCKING;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
The performance of two-section, passively mode-locked semiconductor lasers is theoretically analyzed for different cavity designs. Contrary to the intuition, placing the saturable absorber section close to an anti-reflection coated facet leads to a substantial increase in output power, reduces the jitter and broadens the region of stable operation.
引用
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页数:3
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