Convertible Insulator-Conductor Transition in Silver Nanowire Networks: Engineering the Nanowire Junctions

被引:10
|
作者
Zhu, Yanzhe [1 ]
Chen, Junhong [1 ]
Wan, Tao [1 ]
Peng, Shuhua [2 ]
Huang, Shihao [1 ]
Jiang, Yifeng [1 ]
Li, Sean [1 ]
Chu, Dewei [1 ]
机构
[1] Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
[2] Univ New South Wales, Sch Mech & Mfg Engn, Sydney, NSW 2052, Australia
来源
ACS APPLIED ELECTRONIC MATERIALS | 2019年 / 1卷 / 07期
基金
澳大利亚研究理事会;
关键词
Ag nanowire networks; nanowire junctions; Ag migration; switching; density; TRANSPARENT ELECTRODES; MEMORY; RESISTANCE;
D O I
10.1021/acsaelm.9b00218
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Achieving a switchable conductance in metallic nanowire networks is of great importance for applications in wearable electronics, selectors, information storage, and neuromorphic computing. However, to realize the electricfield-induced switchable conductance, an insulating characteristic in a conductive network should be enabled first to allow a desirable switch window, and in turn, metal/oxide core-shell nanowires and nanowire-polymer composites have been proposed. Here, a novel strategy to tune the electrical conductance of Ag nanowire networks through engineering the interface of nanowire junctions is developed, without introducing an additional insulating layer. The initial device with a percolating network structure shows high resistivity due to the loose wire-to-wire contact, but it can be reversibly switched to a lower resistance state under an electric field. The observed switchable behavior is attributed to the Ag migration between the wire junctions. The device is also turned into a good conductor by formation of an intimate contact between nanowires. With further increasing the heating temperature, the junction resistance dominated network is then determined by individual Ag nanowires as a result of nanowire fragmentation, and a different threshold switching behavior is demonstrated. Furthermore, the overall conductance of the network is closely related with the nanowire density, and the electrical properties of the devices reveal a similar trend to those of the junction-modified samples.
引用
收藏
页码:1275 / 1281
页数:13
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