Pulse-height defect in single-crystal CVD diamond detectors

被引：5

作者：

Beliuskina, O. ^{[1
]}

Strekalovsky, A. O. ^{[2
]}

Aleksandrov, A. A. ^{[2
]}

Aleksandrova, I. A. ^{[2
]}

Devaraja, H. M. ^{[3
,6
]}

Heinz, C. ^{[4
]}

Heinz, S. ^{[4
,5
]}

Hofmann, S. ^{[5
]}

Ilich, S. ^{[2
]}

Imai, N. ^{[1
]}

Kamanin, D. V. ^{[2
]}

Kis, M. ^{[5
]}

Knyazheva, G. N. ^{[2
]}

Kozhuharov, C. ^{[5
]}

Kuznetsova, E. A. ^{[2
]}

Maurer, J. ^{[5
]}

Mishinsky, G. V. ^{[2
]}

Pomorski, M. ^{[6
]}

Pyatkov, Yu. V. ^{[2
]}

Strekalovsky, O. V. ^{[2
]}

Traeger, M. ^{[5
]}

Zhuchko, V. E. ^{[2
]}

机构：

[1] Univ Tokyo, Ctr Nucl Study, Hirosawa 2-1, Wako, Saitama 3510198, Japan

[2] JINR, Flerov Lab Nucl React, Dubna, Moscow Region, Russia

[3] Manipal Univ, Manipal Ctr Nat Sci, Manipal 576014, Karnataka, India

[4] Justus Liebig Univ Giessen, Phys Inst 2, Heinrich Buff Ring 16, D-35392 Giessen, Germany

[5] GSI Helmholtzzentrum Schwerionenforsch, D-64291 Darmstadt, Germany

[6] CEA Saclay, CEA, LIST, Diamond Sensor Lab, F-91191 Gif Sur Yvette, France

来源：

EUROPEAN PHYSICAL JOURNAL A | 2017年 / 53卷 / 02期

关键词：

SURFACE-BARRIER DETECTOR; HEAVY-IONS; FISSION FRAGMENTS; SILICON DETECTORS; PLASMA; SPECTROSCOPY; CALIBRATION; MASS;

D O I：

10.1140/epja/i2017-12223-8

中图分类号：

O57 [原子核物理学、高能物理学];

学科分类号：

070202 ;

摘要：

The pulse-height versus deposited energy response of a single-crystal chemical vapor deposition (scCVD) diamond detector was measured for ions of Ti, Cu, Nb, Ag, Xe, Au, and of fission fragments of Cf-252 at different energies. For the fission fragments, data were also measured at different electric field strengths of the detector. Heavy ions have a significant pulse-height defect in CVD diamond material, which increases with increasing energy of the ions. It also depends on the electrical field strength applied at the detector. The measured pulse-height defects were explained in the framework of recombination models. Calibration methods known from silicon detectors were modified and applied. A comparison with data for the pulse-height defect in silicon detectors was performed.

引用

页数：10

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