A new closed-form expression for capacitive coupling of lossy substrate

被引：0
|
作者：
Gao, W [1 ]
Yu, ZP [1 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new closed-form expression has been developed to model capacitive substrate coupling on RF CMOS chips. The electric wall approximation for the oxide-substrate interface is used in the model. The closed-form for single and multiple parallel on-chip interconnects are given. The methodology is applicable to some particular 3D cases.
引用
收藏
页码：1151 / 1154
页数：4
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