A coupled finite element model for the sublimation growth of SiC

被引：16
|
作者：
Raback, P
Nieminen, R
Yakimova, R
Tuominen, M
Janzen, E
机构：
[1] Ctr Comp Sci, FIN-02101 Espoo, Finland
[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[3] Outokumpu Semitron, S-17824 Eckero, Sweden
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
crystal growth; mathematical modeling; finite element method;
D O I：
10.4028/www.scientific.net/MSF.264-268.65
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper a finite element model for the sublimation growth process is represented. It involves several coupled differential equations that are solved in different grids. The growing surface is modeled using a pseudo dynamic approach where the grid is altered to account for the changes in the geometry.
引用
收藏
页码：65 / 68
页数：4
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