Negative-differential-resistance characteristics in a triangular-barrier resonant tunnelling switch

被引：3
|
作者：
Guo, DF [1 ]
机构：
[1] Chinese Air Force Acad, Dept Elect Engn, Kaohsiung, Taiwan
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 02期
关键词：
D O I：
10.1088/0268-1242/13/2/013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A triangular-barrier switch whose structure center possesses a p-type delta-doped (delta(p(+))) quantum well has been fabricated. By numerical simulation based on the transfer matrix method, the operation of the device is demonstrated. In the (delta(p(+))) well, a miniband is formed. An N-shaped negative-differential-resistance (NDR) phenomenon is observed in the current-voltage (I-V) characteristics because of the resonant tunnelling effect. In our experiments, the I-V characteristics present a sensitive dependence on the well width. The dependence of the tunnelling property on the well width and the influence of temperature upon the NDR characteristics are all investigated in this paper.
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页码：231 / 235
页数：5
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