Improving Performance of Pentacene Field-effect Transistors by Optimizing Substrate Temperature and Active Layer Thickness

被引：0
|
作者：
Li, Shi-guang [1 ]
Chen, Peng-hui [1 ]
Liu, Le [1 ]
机构：
[1] Xian Univ Technol, Coll Automat & Informat Engn, Xian, Shaanxi, Peoples R China
来源：
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2019年
基金：
中国国家自然科学基金;
关键词：
Organic field-effect transistor; pentacene; Substrate temperature; film thickness;
D O I：
10.1109/edssc.2019.8753823
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
High performance pentacene-based organic field-effect transistors (OFETs) with different substrates temperatures and film thicknesses were fabricated. The device performance improved visibly the substrate temperature was 69 degrees C and the pentacene film thickness was about 39nm. The field-effect mobility reached as high as 0.42cm(2)/Vs, the subthreshold swing was 534mV/dec, and the on/off ratio was 10(7)-10(8). Electrical properties and film morphology of the device indicate that the substrate temperature affects grain size of the film, and the film thickness affects the trap density of the film.
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页数：3
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