Optical and electrical characterization of deep traps in erbium doped silicon

被引：0
|
作者：
Castaldini, A
Cavallini, A
Fraboni, B
Binetti, S
Donghi, M
Pizzini, S
Wagner, G
机构：
[1] Univ Bologna, INFM, Dipartimento Fis, I-40137 Bologna, Italy
[2] INFM, Dipartimento Sci Mat, I-20126 Milan, Italy
[3] Inst Kristallzuchtung, D-12489 Berlin, Germany
来源：
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997 | 1998年 / 160卷
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D O I：
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Erbium doped Si epilayers grown by the liquid phase epitaxy (LPE) technique have been studied by means of optical and electrical characterization methods. Their optical emisssion at lambda=1.54 mu m has been observed at T=2K with photoluminescence measurements after a thermal treatment. Junction spectroscopy analyses have identified the deep traps present at the epilayer-substrate interface and in the bulk substrate. A tentative attribution of their origin is here presented.
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页码：297 / 300
页数：4
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