This article presents design and analysis related issues for a solid-state power amplifier (SSPA) integrated with a planar antenna. It discusses the suitability of different planar antenna structures to minimize EM interaction between the radiator and the associated matching circuitry of the solid-state power amplifier. The design and simulation of an S SPA integrated with an antenna is presented, using harmonic balance analysis and an EM simulator simultaneously, to take care of the coupling between antenna and matching circuitry and to address out-of-band instability and nonlinear analysis of the power amplifier
机构:
School of Physical Electronics, University of Electronic Science and Technology of ChinaSchool of Physical Electronics, University of Electronic Science and Technology of China
Zhao L.
Xu J.
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School of Physical Electronics, University of Electronic Science and Technology of ChinaSchool of Physical Electronics, University of Electronic Science and Technology of China
Xu J.
Wang L.
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School of Physical Electronics, University of Electronic Science and Technology of ChinaSchool of Physical Electronics, University of Electronic Science and Technology of China
Wang L.
Wang M.-Y.
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School of Physical Electronics, University of Electronic Science and Technology of ChinaSchool of Physical Electronics, University of Electronic Science and Technology of China
机构:
Key Laboratory of Wide Band-Gap Semiconductor Materials and Device,School of Microelectronics,Xidian UniversityKey Laboratory of Wide Band-Gap Semiconductor Materials and Device,School of Microelectronics,Xidian University
郝跃
冯辉
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Key Laboratory of Wide Band-Gap Semiconductor Materials and Device,School of Microelectronics,Xidian UniversityKey Laboratory of Wide Band-Gap Semiconductor Materials and Device,School of Microelectronics,Xidian University
冯辉
杨林安
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Key Laboratory of Wide Band-Gap Semiconductor Materials and Device,School of Microelectronics,Xidian UniversityKey Laboratory of Wide Band-Gap Semiconductor Materials and Device,School of Microelectronics,Xidian University
杨林安
马晓华
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Key Laboratory of Wide Band-Gap Semiconductor Materials and Device,School of Microelectronics,Xidian UniversityKey Laboratory of Wide Band-Gap Semiconductor Materials and Device,School of Microelectronics,Xidian University
马晓华
段焕涛
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Key Laboratory of Wide Band-Gap Semiconductor Materials and Device,School of Microelectronics,Xidian UniversityKey Laboratory of Wide Band-Gap Semiconductor Materials and Device,School of Microelectronics,Xidian University
段焕涛
胡仕刚
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Key Laboratory of Wide Band-Gap Semiconductor Materials and Device,School of Microelectronics,Xidian UniversityKey Laboratory of Wide Band-Gap Semiconductor Materials and Device,School of Microelectronics,Xidian University
机构:
Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Device, Sch Microelect, Xian 710071, Peoples R ChinaXidian Univ, Key Lab Wide Band Gap Semicond Mat & Device, Sch Microelect, Xian 710071, Peoples R China
Chen Chi
Hao Yue
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Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Device, Sch Microelect, Xian 710071, Peoples R ChinaXidian Univ, Key Lab Wide Band Gap Semicond Mat & Device, Sch Microelect, Xian 710071, Peoples R China
Hao Yue
Feng Hui
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Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Device, Sch Microelect, Xian 710071, Peoples R ChinaXidian Univ, Key Lab Wide Band Gap Semicond Mat & Device, Sch Microelect, Xian 710071, Peoples R China
Feng Hui
Yang Linan
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Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Device, Sch Microelect, Xian 710071, Peoples R ChinaXidian Univ, Key Lab Wide Band Gap Semicond Mat & Device, Sch Microelect, Xian 710071, Peoples R China
Yang Linan
Ma Xiaohua
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Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Device, Sch Microelect, Xian 710071, Peoples R ChinaXidian Univ, Key Lab Wide Band Gap Semicond Mat & Device, Sch Microelect, Xian 710071, Peoples R China
Ma Xiaohua
Duan Huantao
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Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Device, Sch Microelect, Xian 710071, Peoples R ChinaXidian Univ, Key Lab Wide Band Gap Semicond Mat & Device, Sch Microelect, Xian 710071, Peoples R China
Duan Huantao
Hu Shigang
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Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Device, Sch Microelect, Xian 710071, Peoples R ChinaXidian Univ, Key Lab Wide Band Gap Semicond Mat & Device, Sch Microelect, Xian 710071, Peoples R China
机构:
King Monkuts Univ Technol North Bangkok, Sirindhorn Int Thai German Grad Sch Engn TGGS, 1518 Pibulsongkram Rd, Bangkok, ThailandKing Monkuts Univ Technol North Bangkok, Sirindhorn Int Thai German Grad Sch Engn TGGS, 1518 Pibulsongkram Rd, Bangkok, Thailand
Kiatwarin, Pakawat
Chalermwisutkul, Suramate
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King Monkuts Univ Technol North Bangkok, Sirindhorn Int Thai German Grad Sch Engn TGGS, 1518 Pibulsongkram Rd, Bangkok, ThailandKing Monkuts Univ Technol North Bangkok, Sirindhorn Int Thai German Grad Sch Engn TGGS, 1518 Pibulsongkram Rd, Bangkok, Thailand
Chalermwisutkul, Suramate
CIRCUITS, SYSTEM AND SIMULATION,
2011,
7
: 183
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