EFFECTS OF EVAPORATED TELLURIUM BACK BUFFER LAYER ON CdTe SOLAR CELL

被引：0

作者：

Li, Y. ^{[1
]}

Li, J. ^{[2
]}

Yin, X. ^{[1
]}

Chen, Q. ^{[1
]}

Wang, W. ^{[1
]}

Wu, L. ^{[1
]}

Hao, X. ^{[2
]}

Dong, J. ^{[1
]}

机构：

[1] Sichuan Univ, Coll Mat Sci & Engn, Inst Solar Energy Mat & Devices, Chengdu 610064, Sichuan, Peoples R China

[2] Sichuan Univ, Inst New Energy & Low Carbon Technol, Chengdu 610027, Sichuan, Peoples R China

来源：

CHALCOGENIDE LETTERS | 2019年 / 16卷 / 11期

基金：

中国国家自然科学基金;

关键词：

CdTe solar cells; Evaporated Te back buffer; Cu-doped CdTe surface; Back contact barrier; TE LAYER; EFFICIENCY; PERFORMANCE; CU;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The heavily doped tellurium (Te) -rich layer is an effective back contact material by chemical etching CdTe traditionally. But the reported studies drew the conflicting conclusions concerning the physical mechanisms about Te layer in CdTe. In this paper an evaporated Te layer based on a CuCl2 treated CdTe surface was developed for application in CdS/CdT(1)e solar cells, and the effects of the evaporated Te buffer on the device performance were evaluated in detail. It is found that the effects of Te layer on the device performance depend on the CdTe surface. As a result, an open circuit voltage up to 825mV and filling factor up to 70% was obtained for the devices with an evaporated Te buffer after CuCl2 treatment.

引用

页码：535 / 544

页数：10

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