Study of the optical properties of Sb2(Se1-xSx)3 (x=0-1) solid solutions
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Uslu, Mehmet Ender
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Kondrotas, Rokas
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State Res Inst Ctr Phys Sci & Technol, Sauletekio Ave, LT-10257 Vilnius, LithuaniaTallinn Univ Technol, Dept Mat & Environm Technol, Ehitajate Tee 5, EE-19086 Tallinn, Estonia
Kondrotas, Rokas
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Nedzinskas, Ramunas
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State Res Inst Ctr Phys Sci & Technol, Sauletekio Ave, LT-10257 Vilnius, LithuaniaTallinn Univ Technol, Dept Mat & Environm Technol, Ehitajate Tee 5, EE-19086 Tallinn, Estonia
Nedzinskas, Ramunas
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Volobujeva, Olga
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Tallinn Univ Technol, Dept Mat & Environm Technol, Ehitajate Tee 5, EE-19086 Tallinn, EstoniaTallinn Univ Technol, Dept Mat & Environm Technol, Ehitajate Tee 5, EE-19086 Tallinn, Estonia
Volobujeva, Olga
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Timmo, Kristi
[1
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Kauk-Kuusik, Marit
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Krustok, Juri
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Tallinn Univ Technol, Dept Mat & Environm Technol, Ehitajate Tee 5, EE-19086 Tallinn, EstoniaTallinn Univ Technol, Dept Mat & Environm Technol, Ehitajate Tee 5, EE-19086 Tallinn, Estonia
Krustok, Juri
[1
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Grossberg, Maarja
[1
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[1] Tallinn Univ Technol, Dept Mat & Environm Technol, Ehitajate Tee 5, EE-19086 Tallinn, Estonia
[2] State Res Inst Ctr Phys Sci & Technol, Sauletekio Ave, LT-10257 Vilnius, Lithuania
Photoluminescence;
Excitons;
Deep donor-deep acceptor pairs;
Electron phonon interaction;
Sb-2(Se1-xSx)(3);
SB2SE3;
PHOTOLUMINESCENCE;
D O I:
10.1016/j.mssp.2022.106571
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This study presents a detailed analysis of the optical properties of the Sb-2(Se1-xSx)(3) (x = 0-1) polycrystals. Four antimony selenosulfide solid solutions Sb-2(Se1-xSx)(3) together with Sb2Se3 and Sb2S3 were synthesized from elemental precursors at the same synthesis conditions, only varying the x = S/(Se + S) value with a step of delta x = 0.2. Successful formation of the Sb-2(Se1-xSx)(3) solid solutions was determined by Raman spectroscopy and X-ray diffraction. As expected for the same type of crystal structure of Sb2Se3 and Sb2S3, the bimodal behavior of Ag Raman mode in Sb-2(Se1-xSx)(3) was detected. Temperature and excitation power dependent photoluminescence (PL) analysis of Sb-2(Se1-xSx)(3) was performed in order to look into the electronic and defect structure of these promising semiconductor materials for optoelectronic applications. The shift of the near band edge PL emission in Sb-2(Se1-xSx)(3) towards higher energies from 1.309 eV to 1.728 eV with increasing sulfur content was detected at T = 3 K. A change in the radiative recombination mechanism was detected being of excitonic origin in samples with x <= 0.2 and resulting from deep donor-deep acceptor pair recombination in samples with x > 0.2.
机构:
Southeast Univ, Sch Mat Sci & Engn, Nanjing 211189, Peoples R ChinaSoutheast Univ, Sch Mat Sci & Engn, Nanjing 211189, Peoples R China
Tian, Zhihua
Yan, Bingzhen
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Southeast Univ, Sch Mat Sci & Engn, Nanjing 211189, Peoples R ChinaSoutheast Univ, Sch Mat Sci & Engn, Nanjing 211189, Peoples R China
Yan, Bingzhen
Wu, Fushuo
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Southeast Univ, Sch Mat Sci & Engn, Nanjing 211189, Peoples R ChinaSoutheast Univ, Sch Mat Sci & Engn, Nanjing 211189, Peoples R China
Wu, Fushuo
Tang, Jingwen
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Southeast Univ, Sch Mat Sci & Engn, Nanjing 211189, Peoples R ChinaSoutheast Univ, Sch Mat Sci & Engn, Nanjing 211189, Peoples R China
Tang, Jingwen
Xu, Xueqin
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Southeast Univ, Sch Mat Sci & Engn, Nanjing 211189, Peoples R ChinaSoutheast Univ, Sch Mat Sci & Engn, Nanjing 211189, Peoples R China
Xu, Xueqin
Liu, Jian
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Southeast Univ, Sch Mat Sci & Engn, Nanjing 211189, Peoples R China
Wuxi Lintex Adv Mat Co Ltd, Wuxi 214145, Peoples R ChinaSoutheast Univ, Sch Mat Sci & Engn, Nanjing 211189, Peoples R China
Liu, Jian
Zhang, Peigen
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Southeast Univ, Sch Mat Sci & Engn, Nanjing 211189, Peoples R ChinaSoutheast Univ, Sch Mat Sci & Engn, Nanjing 211189, Peoples R China
Zhang, Peigen
Sun, ZhengMing
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Southeast Univ, Sch Mat Sci & Engn, Nanjing 211189, Peoples R ChinaSoutheast Univ, Sch Mat Sci & Engn, Nanjing 211189, Peoples R China
机构:
School of Materials Science and Engineering, Henan University of TechnologySchool of Materials Science and Engineering, Henan University of Technology
段磊
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望贤成
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张俊
赵建发
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Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
School of Physics, University of Chinese Academy of SciencesSchool of Materials Science and Engineering, Henan University of Technology
赵建发
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李文敏
曹立朋
论文数: 0引用数: 0
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Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
School of Physics, University of Chinese Academy of SciencesSchool of Materials Science and Engineering, Henan University of Technology
曹立朋
赵志伟
论文数: 0引用数: 0
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机构:
School of Materials Science and Engineering, Henan University of TechnologySchool of Materials Science and Engineering, Henan University of Technology
赵志伟
肖长江
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School of Materials Science and Engineering, Henan University of TechnologySchool of Materials Science and Engineering, Henan University of Technology
肖长江
任瑛
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School of Materials Science and Engineering, Henan University of TechnologySchool of Materials Science and Engineering, Henan University of Technology
任瑛
王顺
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School of Materials Science and Engineering, Henan University of TechnologySchool of Materials Science and Engineering, Henan University of Technology
机构:
Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey
Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, AzerbaijanMiddle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey