Self-equilibration of the radius distribution in self-catalyzed GaAs nanowires

被引：0
|
作者：
Leshchenko, E. D. [1 ,2 ]
Turchina, M. A. [2 ]
Dubrovskii, V. G. [2 ,3 ,4 ]
机构：
[1] St Petersburg State Univ, Ulianovskaya St 3, St Petersburg 198504, Russia
[2] St Petersburg Acad Univ, Khlopina 8-3, St Petersburg 194021, Russia
[3] Russian Acad Sci, Ioffe Phys Tech Inst, Politekh Skaya 26, St Petersburg 194021, Russia
[4] ITMO Univ, Kronverkskiy Pr 49, St Petersburg 197101, Russia
来源：
3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016) | 2016年 / 741卷
关键词：
GROWTH;
D O I：
10.1088/1742-6596/741/1/012033
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work addresses the evolution of radius distribution function in self-catalyzed vapor-liquid-solid growth of GaAs nanowires from Ga droplets. Different growth regimes are analyzed depending on the V/III flux ratio. In particular, we find a very unusual self-equilibration regime in which the radius distribution narrows up to a certain stationary radius regardless of the initial size distribution of Ga droplets. This requires that the arsenic vapor flux is larger than the gallium one and that the V/III influx imbalance is compensated by a diffusion flux of gallium adatoms. Approximate analytical solution is compared to the numerical radius distribution obtained by solving the corresponding Fokker-Planck equation by the implicit difference scheme.
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页数：6
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