Universal bias dependence of excess current induced by self-heating effect for a-Si:H TFTs

被引：5

作者：

Chen, Hsin-Li ^{[1
]}

Chen, Wang-Jung ^{[1
]}

Liu, Po-Yuan ^{[1
]}

Cheng, Kuo-Hsing ^{[1
]}

Lai, Ming-Sheng ^{[1
]}

Wang, Chih-Wei ^{[1
]}

Liu, Chun-Ting ^{[1
]}

机构：

[1] AU Optron Corp, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 05期

关键词：

a-Si : H thin-film transistors (TFTs); potential barrier; scattering; self-heating effect; thermionic emission; trapped charges;

D O I：

10.1109/TED.2007.893191

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A universal bias correlation of the excess current induced by the self-heating effect is found with the dependence on the dissipated power for a-Si:H thin-film transistors (TFTs). By inspecting the characteristics of I-DS/W versus W, the channel width for TFTs without the self-heating effect is identified. From the difference of the total current and the nonself-heating one, the excess current is extracted. Based on the transport mechanism, together with the intrinsic nature of the direct correlation between lattice temperature and joule heating, the underlying mechanism for the self-heating effect of a-Si:H TFTs is investigated. This discovery will be beneficial to further establish the physics-based model for the self-heating effect of a-Si:H TFTs.

引用

页码：1238 / 1243

页数：6

共 50 条

[31] Modeling Bias Dependence of Self-Heating in GaN HEMTs Using Two Heat Sources
Chen, Xuesong
Boumaiza, Slim
Wei, Lan
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (08) : 3082 - 3087
[32] Study on Channel Current Variation and Bias Stress Behavior of Fabricated a-Si:H TFTs with Wavy-Edge Source/Drain Electrodes
Jeong, Jaewook
Chung, Seungjun
Hong, Yongtaek
Baek, Seung Ho
Tutt, Lee
Burburry, Mitch
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 54 (01) : 441 - 445
[33] DC-gate-bias stressing of a-Si : H TFTs fabricated at 150°C on polyimide foil
Gleskova, H
Wagner, S
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (08) : 1667 - 1671
[34] Investigation of the Self-Heating Effect in High Performance Organic TFTs With Multi-Finger Structure
Chen, Yu-An
Zheng, Yu-Zhe
Chang, Ting-Chang
Zhou, Kuan-Ju
Sun, Pei-Jun
Hung, Yang-Hao
Lee, Ya-Huan
Tsai, Tsung-Ming
Chen, Jin-Wei
Kuo, Chuan-Wei
Tsai, Chia-Hung
Ogier, Simon
IEEE ELECTRON DEVICE LETTERS, 2022, 43 (08) : 1243 - 1246
[35] The Effect of Back-Channel Treatment on the Photo-Leakage Current of a-Si TFTs
Yang, Chao-Yu
Lin, Chih Yuan
Huang, Shih-Che
Huang, Chun-Yao
Chen, Hsin-Li
IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2010, : 715 - 718
[36] Effect of the Optical Bias on the a-Si:H Optical Demultiplexer Device
Fernandes, Miguel
Vieira, Manuela
Vieira, Manuel A.
Louro, Paula
Fernandes, Miguel
Vieira, Manuela
Vieira, Manuel A.
Louro, Paula
PROCEEDINGS OF SENSORDEVICES 2011: THE SECOND INTERNATIONAL CONFERENCE ON SENSOR DEVICE TECHNOLOGIES AND APPLICATIONS, 2011, : 118 - 122
[37] The effect of passivation materials on electrical performances of a-Si:H TFTs fabricated on a metal foil
Park, S. Y.
Choi, N. B.
Han, Chang-wook
Kang, In-Byeong
IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2007, : 1955 - 1958
[38] Effect of Anneal Time on the Enhanced Performance of a-Si:H TFTs for Future Display Technology
Indluru, A.
Venugopal, S. M.
Allee, D. R.
Alford, T. L.
JOURNAL OF DISPLAY TECHNOLOGY, 2011, 7 (06): : 306 - 310
[39] Abnormal Hump Effect Induced by Hydrogen Diffusion during Self-Heating Stress in Top-Gate Amorphous InGaZnO TFTs
Chen H.-C.
Chen J.-J.
Tu Y.-F.
Zhou K.-J.
Kuo C.-W.
Su W.-C.
Hung Y.-H.
Shih Y.-S.
Huang H.-C.
Tsai T.-M.
Huang J.-W.
Lai W.-C.
Chang T.-C.
IEEE Transactions on Electron Devices, 2020, 67 (07) : 2807 - 2811
[40] Width dependent degradation of amorphous Si:H thin film transistors due to Self-heating effect
Park, DongYoung
Nam, DongHo
Jeong, SeungWoo
Choi, Hoon
Moon, KyoHo
Choi, YoungSeok
IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2010, : 791 - 792

← 1 2 3 4 5 →